TIP101 datasheet, PDF - EEWORLD Datasheet

TIP101: DescriptionPower Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size50KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1463413315
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Other features	BUILT IN BIAS RESISTANCE RATIO IS 0.06
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

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