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DTB133HK

Description
Digital transistors (built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size51KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTB133HK Overview

Digital transistors (built-in resistors)

DTB133HK Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresDIGITAL, BUILT IN BIAS RESISTOR RATIO 3.03
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

DTB133HK Related Products

DTB133HK DTB133HS
Description Digital transistors (built-in resistors) Digital transistors (built-in resistors)
Is it Rohs certified? conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Other features DIGITAL, BUILT IN BIAS RESISTOR RATIO 3.03 BUILT-IN BIAS RESISTOR RATIO IS 3
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 56 56
JESD-30 code R-PDSO-G3 R-PSIP-T3
JESD-609 code e1 e1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface TIN SILVER COPPER TIN SILVER COPPER
Terminal form GULL WING THROUGH-HOLE
Terminal location DUAL SINGLE
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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