3N170 datasheet, PDF - EEWORLD Datasheet

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3N170: DescriptionN-channel mosfet enhancement mode; CategoryDiscrete semiconductor The transistor; File Size116KB，2 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html; Environmental Compliance

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3N170 Overview

N-channel mosfet enhancement mode

3N170 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Linear ( ADI )
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	VERY HIGH INPUT IMPEDANCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (ID)	0.03 A
Maximum drain-source on-resistance	200 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1.3 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	135 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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3N170 3N171

Linear Integrated Systems

FEATURES

Direct Replacement for INTERSIL 3N170 & 3N171

LOW DRAIN TO SOURCE RESISTANCE

FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Current

Drain to Source

Maximum Voltages

Drain to Gate

Drain to Source

Gate to Source

±35V

25V

±35V

30mA

* Body tied to Case.

300mW

-65 to +150 °C

-55 to +135 °C

ds(on)

≤

200Ω

d(on)

≤

3.0ns

N-CHANNEL MOSFET

ENHANCEMENT MODE

TO-72

BOTTOM VIEW

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V

= 0V unless otherwise stated)

SYMBOL

DSS

DS(on)

GS(th)

GSS

DSS

D(on)

ds(on)

rss

iss

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain to Source "On" Voltage

Gate to Source

Threshold Voltage

Gate Leakage Current

Drain Leakage Current "Off"

Drain Current "On"

Forward Transconductance

Drain to Source "On" Resistance

Reverse Transfer Capacitance

Input Capacitance

Drain to Body Capacitance

1000

200

1.3

5.0

3N170

3N171

1.0

1.5

MIN

2.0

µS

Ω

TYP

MAX UNITS

CONDITIONS

= 10µA, V

= 0V

= 10mA, V

= 10V

= 10V, I

= 10µA

= -35V, V

= 0V

= 10V, V

= 0V

= 10V, V

= 10V

= 10V, I

= 2.0mA,

= 1.0kHz

= 10V, I

= 0A,

= 1.0kHz

= 0V, V

= 0V,

= 1.0MHz

= 10V, V

= 0V,

= 1.0MHz

= 10V,

= 1.0MHz

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

3N170 Related Products

	3N170	3N171	3N170-1
Description	N-channel mosfet enhancement mode	N-channel mosfet enhancement mode	N-channel mosfet enhancement mode
Is it lead-free?	Lead free	Lead free	-
Is it Rohs certified?	conform to	conform to	-
Parts packaging code	TO-72	TO-72	-
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	-
Contacts	4	4	-
Reach Compliance Code	compliant	compliant	-
ECCN code	EAR99	EAR99	-
Other features	VERY HIGH INPUT IMPEDANCE	VERY HIGH INPUT IMPEDANCE	-
Configuration	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	25 V	25 V	-
Maximum drain current (ID)	0.03 A	0.03 A	-
Maximum drain-source on-resistance	200 Ω	200 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Maximum feedback capacitance (Crss)	1.3 pF	1.3 pF	-
JEDEC-95 code	TO-72	TO-72	-
JESD-30 code	O-MBCY-W4	O-MBCY-W4	-
Number of components	1	1	-
Number of terminals	4	4	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	135 °C	135 °C	-
Package body material	METAL	METAL	-
Package shape	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal form	WIRE	WIRE	-
Terminal location	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-

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