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SD101A
THRU
SD101C
Small Signal
Schottky Diodes
Features
l
l
l
Low Reverse Recovery Time
Low Reverse Capacitance
Low Forward Voltage Drop
l
Guard Ring Construction for Transient Protection
Mechanical Data
l
Case: DO-35, Glass
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: Indicated by Cathode Band
DO-35
Maximum Ratings @ 25
o
C Unless Otherwise Specified
D
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum sigle cycle surge 10us
square wave
Power Dissipation(Note 1)
Thermal Resistance, Junction to
Ambient
Junction Tmperature
Operation/Storage Temp. Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FSM
P
d
R
T
j
T
STG
SD101A
SD101B
SD101C
60V
50V
40V
A
Cathode
Mark
42V
35V
2.0A
400mW
300K/W
125 C
-55 to +150 C
o
o
28V
B
D
C
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol Max
Test Condition
Leakage Current
SD101A
200nA V
R
=50V
SD101B
I
R
200nA V
R
=40V
SD101C
200nA V
R
=30V
Maximum Forward SD101A
Voltage Drop SD101B
SD101C
SD101A
SD101B
SD101C
Junction Cap. SD101A
SD101B
SD101C
Reverse Recovery Time
0.41V
0.4V
0.39V I
F
=1mA
I
F
=15mA
1V
0.95V
0.9V
2.0pF
2.1pF V
R
=0V, f=1.0MHz
2.2pF
I
F
=I
R
=50mA, recover to
1ns
200mA/0.1I
R
DIMENSIONS
INCHES
MIN
---
---
---
1.000
MM
MIN
---
---
---
25.40
DIM
A
B
C
D
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
---
NOTE
V
F
C
j
t
rr
Note
: 1. Valid provided that electrodes are kept at ambient temperature
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SD101A thru SD101C
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
mA
Figure 2. Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA
A
A
B
C
B
C
I
F
I
F
V
F
Figure 3.Typical variation of reverse current
at versus temperature
mA
V
F
Figure 4. Typical capacitance curve as a function
of reverse voltage
mA
A
B
C
I
R
I
R
V
R
V
R
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