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EDE5104AGSE

Description
512m bits ddr2 sdram
File Size684KB,65 Pages
ManufacturerElpida Memory
Websitehttp://www.elpida.com/en
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EDE5104AGSE Overview

512m bits ddr2 sdram

PRELIMINARY DATA SHEET
512M bits DDR2 SDRAM
EDE5104AGSE (128M words
×
4 bits)
EDE5108AGSE (64M words
×
8 bits)
Description
The EDE5104AGSE is a 512M bits DDR2 SDRAM
organized as 33,554,432 words
×
4 bits
×
4 banks.
The EDE5108AGSE is a 512M bits DDR2 SDRAM
organized as 16,777,216 words
×
8 bits
×
4 banks.
They are packaged in 60-ball FBGA (µBGA
) package.
Features
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data mask (DM) for write data
Burst lengths: 4, 8
/CAS Latency (CL): 3, 4, 5
Auto precharge operation for each burst access
Auto refresh and self refresh modes
Average refresh period
7.8µs at 0°C
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
SSTL_18 compatible I/O
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
Programmable RDQS, /RDQS output for making
×
8
organization compatible to
×
4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
RoHS compliant
Document No. E0715E20 (Ver. 2.0)
Date Published July 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2005

EDE5104AGSE Related Products

EDE5104AGSE EDE5108AGSE-4A-E EDE5104AGSE-5C-E EDE5104AGSE-4A-E EDE5108AGSE-5C-E EDE5108AGSE EDE5104AGSE-6C-E EDE5108AGSE-6C-E EDE5108AGSE-6E-E EDE5104AGSE-6E-E
Description 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram 512m bits ddr2 sdram
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