LED - Chip
discontinued
Radiation
Infrared
Type
DDH
6/21/2007
Technology
AlGaAs/AlGaAs
ELC-875-21
rev. 04/07
Electrodes
N (cathode) up
1000
typ. dimensions (µm)
typ. thickness
180 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
PoC-05
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Forward voltage
Reverse voltage
Radiant power
1
Radiant power
2
Radiant power
3
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
1000
Symbol
Min
Typ
Max
Unit
I
F
= 20 mA
I
F
= 300 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
= 300 mA
V
F
V
F
V
R
Φ
e
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
860
5
2.0
1.3
1.66
1.8
2.1
V
V
V
3.0
49
95
875
45
25
890
mW
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header
Measured on bare chip on TO-18 header and heat sink, 10s current flow
3
Measured on epoxy chip on TO-18 header and heat sink, 10s current flow (information only)
Labeling
Type
ELС-875-21
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
Microcontroller MCU
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