LED - Chip
Preliminary
Radiation
Green
Type
Standard
10.04.2007
Technology
InGaN/Al
2
O
3
ELС-525-31
rev. 01/07
Electrodes
Both on top side
1000
typ. dimensions (±25) µm
P
typ. thickness
90 (±10) µm
contact metalization
gold alloy, 1.5 µm
backside metalization
N
N
P
aluminium alloy, 1.0 µm
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Forward voltage
1
Reverse voltage
Luminous intensity
1)
Luminous intensity
1)
Peak wavelength
Dominant wavelength
Spectral bandwidth at 50%
Switching time
1)
Symbol
Min
Typ
Max
Unit
I
F
= 20 mA
I
F
= 350 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 350 mA
I
F
= 20 mA
I
F
= 350 mA
I
F
= 20 mA
I
F
= 20 mA
V
F
V
F
V
R
Ι
V
Ι
V
λ
P
λ
D
∆λ
0.5
t
r
, t
f
515
5
1300
12000
2.5
3.19
3.1
3.7
V
V
V
1500
14000
524
525
35
10
535
mcd
mcd
nm
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-525-31
Lot N°
Ι
v
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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