LED - Chip
Preliminary
Radiation
Infrared
Type
DH
10.04.2007
Technology
AlGaAs/GaAs
ELС-950-11
rev. 01/06
Electrodes
P (anode) up
1000
typ. dimensions (µm)
typ. thickness
270 (±25) µm
cathode
gold alloy, 0.5 µm
structured, 25% covered
anode
gold alloy, 1.5 µm
PoC-05
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Forward voltage
2
Reverse voltage
Radiant power
1
Radiant power
2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
1000
Symbol
Min
Typ
Max
Unit
I
F
= 20 mA
I
F
= 350 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 350 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
V
F
V
F
V
R
Φ
e
Φ
e
λ
P
∆λ
0.5
t
r
, t
f
5
1.0
18
940
1.1
1.5
1.3
1.7
V
V
V
1.3
23
950
45
600
960
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with
EPIGAP
equipment (for information only)
Labeling
Type
ELС-950-11
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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