P-channel power mosfets
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 380 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 150 V |
| Maximum drain current (Abs) (ID) | 9 A |
| Maximum drain current (ID) | 9 A |
| Maximum drain-source on-resistance | 0.7 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 125 W |
| Maximum power dissipation(Abs) | 125 W |
| Maximum pulsed drain current (IDM) | 37 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 30 ns |
| Maximum opening time (tons) | 45 ns |
| IRF9643 | IRF9632 | IRF9633 | IRF9631 | IRF9641 | IRF9642 | IRF9532 | IRF9533 | IRF9531 | IRF9540 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets | P-channel power mosfets |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | SFM | SFM | SFM | SFM | SFM | SFM | SFM | SFM | SFM | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 380 mJ | 260 mJ | 260 mJ | 260 mJ | 380 mJ | 380 mJ | 550 mJ | 550 mJ | 550 mJ | 560 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 150 V | 200 V | 150 V | 150 V | 150 V | 200 V | 100 V | 60 V | 60 V | 100 V |
| Maximum drain current (Abs) (ID) | 9 A | 3 A | 3 A | 4 A | 11 A | 9 A | 10 A | 10 A | 12 A | 19 A |
| Maximum drain current (ID) | 9 A | 5.5 A | 5.5 A | 6.5 A | 11 A | 9 A | 10 A | 10 A | 12 A | 19 A |
| Maximum drain-source on-resistance | 0.7 Ω | 1.2 Ω | 1.2 Ω | 0.8 Ω | 0.5 Ω | 0.7 Ω | 0.4 Ω | 0.4 Ω | 0.3 Ω | 0.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power consumption environment | 125 W | 75 W | 75 W | 75 W | 125 W | 125 W | 75 W | 75 W | 75 W | 125 W |
| Maximum power dissipation(Abs) | 125 W | 75 W | 75 W | 75 W | 125 W | 125 W | 75 W | 75 W | 75 W | 150 W |
| Maximum pulsed drain current (IDM) | 37 A | 22 A | 22 A | 26 A | 44 A | 36 A | 40 A | 40 A | 48 A | 70 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 30 ns | 180 ns | 180 ns | 180 ns | 30 ns | 30 ns | 280 ns | 280 ns | 280 ns | 32 ns |
| Maximum opening time (tons) | 45 ns | 150 ns | 150 ns | 150 ns | 45 ns | 45 ns | 200 ns | 200 ns | 200 ns | 45 ns |
| Is it Rohs certified? | incompatible | incompatible | incompatible | - | - | incompatible | incompatible | incompatible | - | - |
| JESD-609 code | e0 | e0 | e0 | - | - | e0 | e0 | e0 | - | - |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
Microchip MCU
DIY/Open Source Hardware
FPGA/CPLD
Analog electronics
TI Technology Forum
DigiKey Technology Zone
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD