FMMT5551 datasheet, PDF - EEWORLD Datasheet

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FMMT5551: Descriptionsot23 npn silicon planar high voltage transistors; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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FMMT5551 Overview

sot23 npn silicon planar high voltage transistors

FMMT5551 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.33 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTORS

ISSUE 4 - NOVEMBER 1996

7

PARTMARKING DETAILS -

FMMT5550 1FZ

FMMT5551 ZG1

FMMT5550 FMMT5400

FMMT5551 FMMT5401

FMMT5550

FMMT5551

C

B

E

COMPLEMENTARY TYPES -

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

FMMT5550 FMMT5551

160

140

6

600

330

180

160

6

600

330

UNIT

V

mA

mW

°C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

FMMT5550

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Static Forward

Current Transfer

Ratio

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Transition

Frequency

Output Capacitance

Small Signal

Noise Figure

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

160

140

6

100

60

20

80

30

MAX.

MIN.

180

160

6

FMMT5551

MAX. UNIT

V

µ

A

CONDITIONS.

I

C

=100

µ

A

I

C

=1mA

I

E

=10

µ

A*

V

CB

=100V

V

CB

=100V, T

A

=100°C

V

CB

=120V

V

CB

=120V, T

A

=100°C

I

C

=1mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

I

C

=50mA, V

CE

=5V

I

C

=10mA, I

B

=1mA

I

C

=50mA, I

B

=5mA

I

C

=10mA, I

B

=1mA

I

C

=50mA, I

B

=5mA

I

C

=10mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

I

C

=1mA, V

CE

=10V

f=1KHz

nA

50

250

nA

µ

A

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

obo

h

fe

NF

250

0.15

0.25

1.0

1.2

0.15 V

0.20 V

1.0 V

1.2 V

100

300 MHz

6.0 pF

50

260

8

dB

100

300

6.0

50

200

10

I

C

=250

µ

A, V

CE

=5V,

R

S

=1K

Ω

f=10Hz to 15.7KHz

.

Periodic Sample Test Only

PAGE NUMBER

FMMT5551 Related Products

	FMMT5551	FMMT5550-1FZ	FMMT5551-ZG1	FMMT5550
Description	sot23 npn silicon planar high voltage transistors	sot23 npn silicon planar high voltage transistors	sot23 npn silicon planar high voltage transistors	sot23 npn silicon planar high voltage transistors

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