SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996
7
PARTMARKING DETAILS -
FMMT5550 1FZ
FMMT5551 ZG1
FMMT5550 FMMT5400
FMMT5551 FMMT5401
FMMT5550
FMMT5551
C
B
E
COMPLEMENTARY TYPES -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
FMMT5550 FMMT5551
160
140
6
600
330
180
160
6
600
330
UNIT
V
V
V
mA
mW
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMT5550
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Static Forward
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
Small Signal
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
160
140
6
100
100
60
60
20
80
80
30
MAX.
MIN.
180
160
6
FMMT5551
MAX. UNIT
V
V
V
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=1mA
I
E
=10
µ
A*
V
CB
=100V
V
CB
=100V, T
A
=100°C
V
CB
=120V
V
CB
=120V, T
A
=100°C
I
C
=1mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=50mA, V
CE
=5V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=1mA, V
CE
=10V
f=1KHz
nA
50
50
250
nA
µ
A
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
h
fe
NF
250
0.15
0.25
1.0
1.2
0.15 V
0.20 V
1.0 V
1.2 V
100
300 MHz
6.0 pF
50
260
8
dB
100
300
6.0
50
200
10
I
C
=250
µ
A, V
CE
=5V,
R
S
=1K
Ω
f=10Hz to 15.7KHz
.
Periodic Sample Test Only
PAGE NUMBER
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