U62H256AS2A55G1 datasheet, PDF

U62H256AS2A55G1: Descriptionautomotive fast 32k X 8 sram; Categorystorage storage; File Size157KB，10 Pages; ManufacturerZentrum Mikroelektronik Dresden AG (IDT); Environmental Compliance

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U62H256AS2A55G1 Overview

automotive fast 32k X 8 sram

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zentrum Mikroelektronik Dresden AG (IDT)
Parts packaging code	SOIC
package instruction	SOP, SOP28,.5
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e3
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP28,.5
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	2.85 mm
Minimum standby current	2 V
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	8.405 mm

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