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P6SMBJ120C

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size170KB,5 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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P6SMBJ120C Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

P6SMBJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 5.0 TO 170 Volts
Peak Power Pulse - 600Watt
FEATURES
l
l
l
l
l
l
l
l
l
l
l
For surface mounted applications in order to
SMB/DO-214AA
optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition Rate(duty cycle):0.01%
Fast response time: typically less than
1.0 ps from 0 volts to BV for unidirectional types
Typical I
D
less than 1 A above 10V
High temperature soldering :
260 /10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic
over passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes positive end(cathode)
except Bidirectional
Standard packaging:12 mm tape per(EIA 481)
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation on 10/1000 s waveform
(Note 1,2,Fig 1)
Peak Pulse Current on 10/1000 s waveform
(Note 1,Fig 3)
Peak forward Surge Current 8.3ms single half sine-wave
superimposed on rated load(JEDEC Method) (Note 2,3)
Operating Junction and Storage Temperature Range
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25 per Fig. 2.
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
,T
STG
VALUE
Minimum 600
See Table 1
100.0
-55 to +150
UNITS
Watts
Amps
Amps
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