EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS20

Description
200 mW epitaxial planar high-speed diodes
File Size35KB,2 Pages
ManufacturerFCI [First Components International]
Download Datasheet Compare View All

BAS20 Online Shopping

Suppliers Part Number Price MOQ In stock  
BAS20 - - View Buy Now

BAS20 Overview

200 mW epitaxial planar high-speed diodes

BAS19 / BAS20 / BAS21
Surface Mount Fast Switching Diode
Voltage Range
100/150/200 Volts
250m Watts Power Dissipation
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
0.020(0.51)
0.015(0.37)
SOT-23
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
BAS19 Marking: A8
BAS20 Marking: A81
BAS21 Marking: A82
Weight: 0.008 gram (approx.
)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.007(0.178)
0.003(0.076)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
BAS19 BAS20 BAS21
Repetitive Peak Reverse Voltage
V
RRM
120
200
250
V
RWM
Working Peak Reverse Voltage
100
150
200
DC Blocking Voltage
V
R
V
R(RMS)
71
106
141
RMS Reverse Voltage
I
FM
400
Forward Continuous Current (Note 1)
Io
200
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Units
V
V
V
mA
mA
A
mA
mW
K/W
O
I
FSM
I
FRM
Pd
R
θJA
T
J
, T
STG
Symbol
2.5
0.5
625
250
500
-65 to + 150
Min
C
Electrical Characteristics
Type Number
Max
1.0
Forward Voltage
IF=100mA
-
VF
IF= 200mA
1.25
Peak Reverse Current
Tj=25℃
100
-
IR
Tj=100℃
15
-
Junction Capacitance
VR=0, f=1.0MHz
Cj
5.0
-
Reverse Recovery Time (Note 2)
trr
50
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x I
R
, R
L
=100Ω.
Units
V
nA
uA
pF
nS
- 828 -

BAS20 Related Products

BAS20 BAS21
Description 200 mW epitaxial planar high-speed diodes 200 mW epitaxial planar high-speed diodes

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号