DI152S datasheet, PDF - EEWORLD Datasheet

DI152S: DescriptionBridge bridge; CategoryDiscrete semiconductor diode; File Size101KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

DI152S Overview

Bridge bridge

Features

Product name: Bridge

Product model: DI152S

Product parameters:

Peak Repetitive Reverse Voltage: VRRM: 200V

Max. Average Rectified Current: IO: 1.5A

Max. Peak Forward Surge Current: IFSM: 50A

Forward Voltage Drop: VF@IF: 1.1V@1A

Max. Reverse Current: IR@VR: 5μA@200V

Package: SDIP

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DIP
package instruction	ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	200 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-50 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

Gallium Nitride (GaN) High Electron Mobility Transistor: When increasing the applied voltage across a power device, the electric field inside the device starts to increase. Once the electric field approaches a critical level, Ec, the power device undergoes ...; 兰博 RF/Wirelessly

Calendar Clock + Environmental Testing——Work Submission: Calendar clock + environmental detectionAuthor:andyProject BackgroundWith the improvement of living standards, people have higher and higher requirements for the indoor living environment. In addition...; anni_zzg XuanTie RISC-V Activity Zone

Software outsourcing breaks out of the "dilemma": Software outsourcing breaks out of the "dilemma" 2006-6-28In 2006, software outsourcing will become a hot spot in the market"There are three main reasons why Chinese software companies' outsourcing pe...; ehk Embedded System

[RVB2601 Creative Development and Application] 2. U8G2 Library Transplantation: 1. U8G2 library transplantationThis time, the U8G2 library is ported to continue adding the routine ch2601_rgb_marquee_demo provided by RVB2601 in the previous post. First, add the U8G2 library code t...; vg552 XuanTie RISC-V Activity Zone

SoC Low Power Design.pdf: SoC Low Power Design.pdf...; zxopenljx EE_FPGA Learning Park

To filter out power supply ripple, what type of capacitor should be used for a 22uf capacitor?: To filter out power supply ripple, what type of capacitor should be used for a 22uf capacitor?...; electricor Power technology

Popular Components