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HM882

Description
30V 3A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size38KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HM882 Overview

30V 3A NPN epitaxial planar transistor

Features

Product Name: 30V 3A NPN Epitaxial Planar Transistor


Product model: HM882


Product Description:


The HM882 is suited for the output stage of 0.75W audio ,voltage regulator, and relay driver.





parameter:


Type: NPN


BVCEO: 30V


IC: 3A


PD: 2W


hFE: MIN 100


hFE: Max. 500


VCE(sat): Max.0.5V


RoHS: PF(lead-free)


Package: SOT-89


HM882 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9514
Issued Date : 1997.06.05
Revised Date : 2006.07.27
Page No. : 1/4
HM882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM882 is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
Absolute Maximum Ratings
SOT-89
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150
°C
Junction Temperature ..................................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................................. 0.6 W
(Note1)
Total Power Dissipation (T
A
=25°C) ................................................................................................................................ 2 W
(Note2)
Total Power Dissipation (T
C
=25°C) ............................................................................................................................. 1.3 W
(Note1)
Total Power Dissipation (T
C
=25°C) ............................................................................................................................. 3.4 W
(Note2)
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage .............................................................................................................................................. 70 V
V
CEO
Collector to Emitter Voltage........................................................................................................................................... 30 V
V
EBO
Emitter to Base Voltage ................................................................................................................................................... 5 V
I
C
Collector Current.................................................................................................................................................................. 3 A
Thermal Characteristic
Characteristic
Thermal Resistance, junction to ambient
(Note1)
Thermal Resistance, junction to ambient
(Note2)
Thermal Resistance, junction to case
Thermal Resistance, junction to case
(Note1)
(Note2)
Symbol
R
θja
R
θja
R
θjc
R
θjc
Max.
208
62.5
86
36.8
Unit
o
o
o
o
C/W
C/W
C/W
C/W
Note1: When tested in free air condition, without heat sinking.
Note2: When mounted on a 40X40X1mm ceramic board.
Electrical Characteristics
(T =25°C)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
40
30
5
-
-
-
-
30
160
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
B
=0
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
V
CE
=5V, I
C
=0.1A, f=100MHz
I
E
=0,V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2
Rank
Range
P
160-320
E
250-500
HM882
HSMC Product Specification
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