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2N5638

Description
jfet N-CH 30v 350mw to92
CategoryDiscrete semiconductor    The transistor   
File Size24KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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2N5638 Overview

jfet N-CH 30v 350mw to92

2N5638 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code3LD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE)
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain-source on-resistance30 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)4 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N5638
2N5638
N-Channel Switch
• This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 51.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T
C
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
30
-30
50
-55 ~ +150
Units
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
I
D(off)
I
DSS
r
DS(on)
r
ds(on)
C
iss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Condition
V
DS
= 0, I
G
= -10µA
V
GS
= -15V, V
DS
= 0
V
DS
= 12V, V
GS
= 15V
V
DS
= 20V, I
GS
= 0
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
= 0, f = 1.0kHz
V
DS
= 0, V
GS
= 12V, f = 1.0MHz
V
DS
= 0V, V
GS
= 12V, f = 1.0MHz
V
DD
= 10V, V
GS(on)
= 0
V
GS(off)
= -12, I
D(on)
= 12mA
R
G
= 50Ω
50
30
30
10
4.0
4.0
5.0
5.0
10
Min.
-30
-1.0
1.0
Typ.
Max.
Units
V
nA
nA
mA
pF
pF
ns
ns
ns
ns
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
Zero-Gate Voltage Drain Current *
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Delay Time
Rise Time
Trun Off Delay Time
Fall Time
On Characteristics
Small Signal Characteristics
Switching Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
1.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

2N5638 Related Products

2N5638 2N5638-D26Z 2N5638_D26Z
Description jfet N-CH 30v 350mw to92 Transistor jfet N-CH 30v 350mw to92
Is it Rohs certified? conform to conform to -
Reach Compliance Code compliant unknow -
FET technology JUNCTION JUNCTION -
JESD-609 code e1 e3 -
Maximum operating temperature 150 °C 150 °C -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 0.35 W 0.35 W -
surface mount NO NO -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) -
Base Number Matches 1 1 -

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