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PBSS5240Y

Description
40 V low VCEsat PNP transistor
CategoryDiscrete semiconductor    The transistor   
File Size46KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PBSS5240Y Overview

40 V low VCEsat PNP transistor

PBSS5240Y Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.27 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)100 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
age
MBD128
PBSS5240Y
40 V low V
CEsat
PNP transistor
Product specification
Supersedes data of 2001 Oct 24
2002 Feb 28
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