K4R881869D-FCT9 datasheet, PDF

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K4R881869D-FCT9: DescriptionRambus DRAM, 16MX18, 32ns, CMOS, PBGA92, WBGA-92; Categorystorage storage; File Size312KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4R881869D-FCT9 Overview

Rambus DRAM, 16MX18, 32ns, CMOS, PBGA92, WBGA-92

K4R881869D-FCT9 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA92,10X18,32
Contacts	92
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	32 ns
Other features	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	1066 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B92
JESD-609 code	e0
length	15.1 mm
memory density	301989888 bit
Memory IC Type	RAMBUS DRAM
memory width	18
Number of functions	1
Number of ports	1
Number of terminals	92
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
organize	16MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA92,10X18,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
Maximum seat height	1.08 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9.3 mm
Base Number Matches	1

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K4R571669D/K4R881869D

Direct RDRAM

™

256/288Mbit RDRAM (D-die)

512K x 16/18bit x 32s banks

Direct RDRAM



Version 1.4

July 2002

Page -1

Version 1.4 July 2002

K4R881869D-FCT9 Related Products

	K4R881869D-FCT9	K4R571669D-FCT9	K4R571669D-FCM8	K4R571669D-FCN9	K4R571669D-FCK8	K4R571669D-FCM9	K4R881869D-FCK8	K4R881869D-FCM8	K4R881869D-FCN9	K4R881869D-FCM9
Description	Rambus DRAM, 16MX18, 32ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, 32ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, 40ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, 32ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, 45ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX16, 35ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, 40ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, 32ns, CMOS, PBGA92, WBGA-92	Rambus DRAM, 16MX18, 35ns, CMOS, PBGA92, WBGA-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32	TFBGA, BGA92,10X18,32
Contacts	92	92	92	92	92	92	92	92	92	92
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
Maximum access time	32 ns	32 ns	40 ns	32 ns	45 ns	35 ns	45 ns	40 ns	32 ns	35 ns
Other features	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	1066 MHz	1066 MHz	800 MHz	1066 MHz	800 MHz	1066 MHz	800 MHz	800 MHz	1066 MHz	1066 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm	15.1 mm
memory density	301989888 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	301989888 bit	301989888 bit	301989888 bit	301989888 bit
Memory IC Type	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM
memory width	18	16	16	16	16	16	18	18	18	18
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	92	92	92	92	92	92	92	92	92	92
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	16MX18	16MX16	16MX16	16MX16	16MX16	16MX16	16MX18	16MX18	16MX18	16MX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32	BGA92,10X18,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm	1.08 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V
Minimum supply voltage (Vsup)	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm	9.3 mm
Base Number Matches	1	1	1	1	1	1	1	1	1	1

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