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DF25214

Description
360 A, 1400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
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DF25214 Overview

360 A, 1400 V, SILICON, RECTIFIER DIODE

DF25214 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerDynex
Contacts2
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
Maximum non-repetitive peak forward current3000 A
Number of components1
Maximum operating temperature150 °C
Maximum output current276 A
Maximum repetitive peak reverse voltage1400 V
Maximum reverse recovery time3.2 µs
surface mountNO

DF25214 Related Products

DF25214 DF252 DF25206 DF25216 JWL21BC2B-B DF25212
Description 360 A, 1400 V, SILICON, RECTIFIER DIODE 360 A, 600 V, SILICON, RECTIFIER DIODE 360 A, 600 V, SILICON, RECTIFIER DIODE 360 A, 1600 V, SILICON, RECTIFIER DIODE General Specifications 360 A, 1200 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free - Lead free Lead free - Lead free
Maker Dynex - Dynex Dynex - Dynex
Contacts 2 - 2 2 - 2
Reach Compliance Code unknow - unknow unknow - unknow
Configuration SINGLE - SINGLE SINGLE - SINGLE
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum non-repetitive peak forward current 3000 A - 3000 A 3000 A - 3000 A
Number of components 1 - 1 1 - 1
Maximum output current 276 A - 360 A 276 A - 276 A
Maximum repetitive peak reverse voltage 1400 V - 600 V 1600 V - 1200 V
Maximum reverse recovery time 3.2 µs - 3.2 µs 3.2 µs - 3.2 µs
surface mount NO - YES NO - NO
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