DF25216 datasheet, PDF - EEWORLD Datasheet

DF25216: Description360 A, 1600 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size43KB，8 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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DF25216 Overview

360 A, 1600 V, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	Dynex
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.6 V
Maximum non-repetitive peak forward current	3000 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	276 A
Maximum repetitive peak reverse voltage	1600 V
Maximum reverse recovery time	3.2 µs
surface mount	NO

	DF25216	DF252	DF25206	JWL21BC2B-B	DF25212	DF25214
Description	360 A, 1600 V, SILICON, RECTIFIER DIODE	360 A, 600 V, SILICON, RECTIFIER DIODE	360 A, 600 V, SILICON, RECTIFIER DIODE	General Specifications	360 A, 1200 V, SILICON, RECTIFIER DIODE	360 A, 1400 V, SILICON, RECTIFIER DIODE
Is it lead-free?	Lead free	-	Lead free	-	Lead free	Lead free
Maker	Dynex	-	Dynex	-	Dynex	Dynex
Contacts	2	-	2	-	2	2
Reach Compliance Code	unknow	-	unknow	-	unknow	unknow
Configuration	SINGLE	-	SINGLE	-	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum non-repetitive peak forward current	3000 A	-	3000 A	-	3000 A	3000 A
Number of components	1	-	1	-	1	1
Maximum output current	276 A	-	360 A	-	276 A	276 A
Maximum repetitive peak reverse voltage	1600 V	-	600 V	-	1200 V	1400 V
Maximum reverse recovery time	3.2 µs	-	3.2 µs	-	3.2 µs	3.2 µs
surface mount	NO	-	YES	-	NO	NO

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