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GS1KTR-HF

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size286KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

GS1KTR-HF Overview

Rectifier Diode,

GS1KTR-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GS1A-GS1M
Technical Data
Data Sheet N0553, Rev. B
GS1A THRU GS1M
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Low Power Loss
Built-in Strain Relief
Plastic Case Material has UL Flammability
Classification Rating 94V-0
This is a Pb − Free Device
“-HF” suffix is for Halogen Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMA
Circuit Diagram
Mechanical Data
Case: SMA molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.06 grams
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum RMS voltage
Average Rectified Output Current
@T
L
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@ I
F
= 1.0 A
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
Reverse Recovery Time(Note1)
Typical Junction Capacitance(Note2)
Typical Thermal Resistance Junction
to Lead (Note 3)
Operating and Storage Temperature Range
Symbol GS1A GS1B GS1D GS1G
V
RRM
V
RWM
V
R
V
RMS
I
O
I
FSM
V
F
I
RM
t
rr
C
J
R
θJL
T
J
,T
STG
50
35
100
70
200
140
400
280
1.0
30
1.10
5.0
200
2.5
15
30
-65 to +175
GS1J
600
420
GS1K
800
560
GS1M
1000
700
Units
V
V
A
A
V
μA
μS
pF
°C/W
°C
Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Mounted on P.C.B.with 8.0mm² land areas.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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