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D2019UK

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size14KB,2 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
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D2019UK Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

D2019UK Parametric

Parameter NameAttribute value
Minimum breakdown voltage40 V
Number of terminals8
Processing package descriptionROHS COMPLIANT, SOP-8
EU RoHS regulationsYes
stateActive
Shell connectionSOURCE
structureSINGLE
drain_current_max__abs___id_10 A
Maximum leakage current10 A
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
jesd_30_codeR-PDSO-G8
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature200 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_30 W
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Powe
surface mountYES
terminal coatingNOT SPECIFIED
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
dditional_featureLOW NOISE
TetraFET
D1211UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
N
8
D
1
2
C
B
P
7
6
5
3
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
H
K
L
J
E
F
G
M
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
30W
40V
±20V
10A
–65 to 150°C
200°C
Prelim. 12/95

D2019UK Related Products

D2019UK D1211 D2019 D1211UK D2020UK
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Minimum breakdown voltage 40 V 40 V 40 V 40 V 40 V
Number of terminals 8 8 8 8 8
Processing package description ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8
EU RoHS regulations Yes Yes Yes Yes Yes
state Active Active Active Active Active
Shell connection SOURCE SOURCE SOURCE SOURCE SOURCE
structure SINGLE SINGLE SINGLE SINGLE SINGLE
drain_current_max__abs___id_ 10 A 10 A 10 A 10 A 10 A
Maximum leakage current 10 A 10 A 10 A 10 A 10 A
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
jesd_30_code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Number of components 1 1 1 1 1
operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
larity_channel_type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
wer_dissipation_max__abs_ 30 W 30 W 30 W 30 W 30 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe
surface mount YES YES YES YES YES
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
dditional_feature LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
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