D1211 datasheet, PDF - EEWORLD Datasheet

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D1211: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size14KB，2 Pages; ManufacturerSEME-LAB; Websitehttp://www.semelab.co.uk

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D1211 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

D1211 Parametric

Parameter Name	Attribute value
Minimum breakdown voltage	40 V
Number of terminals	8
Processing package description	ROHS COMPLIANT, SOP-8
EU RoHS regulations	Yes
state	Active
Shell connection	SOURCE
structure	SINGLE
drain_current_max__abs___id_	10 A
Maximum leakage current	10 A
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
jesd_30_code	R-PDSO-G8
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	N-CHANNEL
wer_dissipation_max__abs_	30 W
qualification_status	COMMERCIAL
sub_category	FET General Purpose Powe
surface mount	YES
terminal coating	NOT SPECIFIED
Terminal form	GULL WING
Terminal location	DUAL
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
dditional_feature	LOW NOISE

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TetraFET

D1211UK

METAL GATE RF SILICON FET

MECHANICAL DATA

A

N

8

D

1

2

C

B

P

7

6

5

3

4

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 12.5V – 500MHz

SINGLE ENDED

FEATURES

H

K

L

J

E

F

G

M

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

SO8 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

P

mm

4.06

5.08

1.27

0.51

3.56

4.06

1.65

0.76

0.51

1.02

45°

0°

7°

0.20

2.18

4.57

Tol.

±0.08

+0.25

-0.00

Min.

Max.

Min.

Max.

±0.08

Max.

±0.08

Inches

0.160

0.200

0.050

0.020

0.140

0.160

0.065

0.030

0.020

0.040

45°

0°

7°

0.008

0.086

0.180

Tol.

±0.003

+0.010

-0.000

Min.

Max.

Min.

Max.

±0.003

Max.

±0.003

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

stg

T

j

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

30W

40V

±20V

10A

–65 to 150°C

200°C

Prelim. 12/95

D1211 Related Products

	D1211	D2019	D1211UK	D2019UK	D2020UK
Description	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Minimum breakdown voltage	40 V	40 V	40 V	40 V	40 V
Number of terminals	8	8	8	8	8
Processing package description	ROHS COMPLIANT, SOP-8	ROHS COMPLIANT, SOP-8	ROHS COMPLIANT, SOP-8	ROHS COMPLIANT, SOP-8	ROHS COMPLIANT, SOP-8
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes
state	Active	Active	Active	Active	Active
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
structure	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
drain_current_max__abs___id_	10 A	10 A	10 A	10 A	10 A
Maximum leakage current	10 A	10 A	10 A	10 A	10 A
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
jesd_30_code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Number of components	1	1	1	1	1
operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
larity_channel_type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
wer_dissipation_max__abs_	30 W	30 W	30 W	30 W	30 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe
surface mount	YES	YES	YES	YES	YES
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
dditional_feature	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE

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