|
D1020UK |
D1020 |
Description |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
Number of terminals |
4 |
4 |
Minimum breakdown voltage |
70 V |
70 V |
Processing package description |
ROHS COMPLIANT, Ceramic, DR, 5 PIN |
ROHS COMPLIANT, Ceramic, DR, 5 PIN |
state |
ACTIVE |
ACTIVE |
packaging shape |
Rectangle |
Rectangle |
Package Size |
Flange mounting |
Flange mounting |
surface mount |
Yes |
Yes |
Terminal form |
FLAT |
FLAT |
terminal coating |
gold |
gold |
Terminal location |
pair |
pair |
Packaging Materials |
Ceramic, Metal-SEALED COFIRED |
Ceramic, Metal-SEALED COFIRED |
structure |
COMMON source, 2 ELEMENTS |
COMMON source, 2 ELEMENTS |
Shell connection |
source |
source |
Number of components |
2 |
2 |
transistor applications |
amplifier |
amplifier |
Transistor component materials |
silicon |
silicon |
Channel type |
N channel |
N channel |
field effect transistor technology |
Metal-OXIDE SEMICONDUCTOR |
Metal-OXIDE SEMICONDUCTOR |
operating mode |
ENHANCEMENT |
ENHANCEMENT |
Transistor type |
RF power |
RF power |
Maximum leakage current |
25 A |
25 A |
highest frequency band |
ULTRA high frequency band |
ULTRA high frequency band |