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OM5261RT

Description
Rectifier Diode, 1 Phase, 2 Element, 8A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size22KB,2 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

OM5261RT Overview

Rectifier Diode, 1 Phase, 2 Element, 8A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

OM5261RT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1927810675
Parts packaging codeTO-257AA
package instructionR-MSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current35 µA
Maximum reverse recovery time0.155 µs
Reverse test voltage100 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE

OM5261RT Preview

OM5261ST/RT/DT
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY,
CENTER-TAP HIGH VOLTAGE RECTIFIER
16 Amp, 1000 Volt, 65 ns trr Soft Recovery
FEATURES
Soft Recovery Characteristics
Hermetic Metal Package, JEDEC TO-257AA
Very Low Forward Voltage
Very High Reverse Voltage Capability
Very Low Reverse Recovery Time
Very Low Switching Losses
Isolated Package
Low Thermal Resistance
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This soft recovery rectifier is ideally suited as a free wheeling diode in converters and
motor control circuits, as well as a rectifier in SMPS. The package is designed for
those applications where a small size and a hermetically sealed package is desirable.
Center-Tap configuration.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) T
J
= 25°C
Non-Repetitive Peak Reverse Voltage, V
RSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Repetitive Peak Forward Current, I
FRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
RMS Forward Current, I
(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Average Forward Current, T
C
= 100°C, Duty Cycle = 50%, I
F(AV)
. . . . . . . . . . . . . . . . . 8A
Surge Non-Repetitive Forward Current, 8.3ms, I
FSM
. . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Power Dissipation, T
C
= 100°C, P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17W
Storage and Junction Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 150°C
Thermal Resistance, Junction-To-Case, R
th(JC)
. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4°C/W
Repetitive Peak Reverse
Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
1
2
COMMON
CATHODE
.150
.140
PIN CONNECTION
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
1
2
3
3
3
3
DOUBLER
OMXXXXRT
OMXXXXDT
OMXXXXST
.430
.410
.038 MAX.
2
.750
.500
.005
Common cathode is standard. Contact the factory for performance
characteristics for common anode and doubler.
4 11 R1
Supersedes 2 07 R0
.035
.025
.100 TYP.
.120 TYP.
Z-Tab package also available.
3.2 - 67
OM5261ST/RT/DT
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
F
R
Test Conditions
V =V
R
RRM
Min.
Typ.
Max.
35
2
1.9
1.8
Unit
µA
mA
V
V
T
J
= 100°C
I = 8A
F
RECOVERY CHARACTERISTICS
Symbol
t
rr
Test Conditions
T = 25°C
J
Min.
Typ.
Max.
155
65
Unit
nS
I
F
= 1A, dI
F
/dt = -15A/µs, V
R
= 30V
I
F
= 0.5A, I
R
= 1A, I
rr
= 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
(Without Series Inductance)
Symbol
t
dI
F
/dt = -32A/µs
IRM
Test Conditions
dI
F
/dt = -64A/µs
dI
F
/dt = -32A/µs
dI
F
/dt = -64A/µs
V
= 200V, I
F
= 8A
J
Min.
Typ.
120
Max.
200
5.5
Unit
nS
A
CC
I
L
P
0.05µH, T = 100°C
See Figure 1
6
RM
TURN-OFF OVERVOLTAGE COEFFICIENT
(With Series Inductance)
Symbol
C=
V
RP
V
CC
T
J
= 100°C
dI
F
/dt = -8A/µs
Test Conditions
V
CC
= 200V, I
F
= I
F(AV)
L
P
12µH, See Figure 2
Min.
Typ.
Max.
4.5
Unit
To evaluate the conduction losses use the following equations:
V
F
= 1.47 + 0.04 I
F
P = 1.47 x I
F(AV)
+ 0.04 I
F2(RMS)
I
F
DUT
L
C
V
CC
V
F
I
RM
V
CC
t
IRM
V
RP
dl
F
/dt
L
C
L
P
V
CC
V
F
V
CC
DUT
dl
F
/dt
I
F
Figure 1:
Turn-off switching characteristics
(without series inductance).
Figure 2:
Turn-off switching characteristics
(with series inductance).
3.2
100
70
TYPICAL FORWARD VOLTAGE
TYPICAL REVERSE CURRENT
I
R
, REVERSE CURRENT (mA)
10
1.0
0.1
0.01
0.001
I
F
, INSTANTANEAOUS
FORWARD CURRENT (AMPS)
50
30
20
10
7.0
5.0
3.0
2.0
T
C
= 100°C
T
C
= 100°C
T
C
= 25°C
100
500
1000
T
C
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
1.2
1.4
1.6
1.8
2.0
1.0
V
F
, INSTANTANEAOUS VOLTAGE (VOLTS)
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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