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VB40100C

Description
dual high-voltage trench mos barrier schottky rectifier ultra low VF = 0.38 V at IF = 5 A
File Size139KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VB40100C Overview

dual high-voltage trench mos barrier schottky rectifier ultra low VF = 0.38 V at IF = 5 A

V40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.38 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
V40100C
PIN 1
PIN 3
3
1
VI40100C
PIN 1
PIN 3
2
3
1
PIN 2
CASE
TYPICAL APPLICATIONS
PIN 2
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variation
2 x 20 A
100 V
250 A
0.61 V
150 °C
TO-220AB, TO-262AA
Common cathode
MECHANICAL DATA
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs max.
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V40100C
100
40
20
250
10 000
-40 to +150
VI40100C
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
Document Number: 89162
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description dual high-voltage trench mos barrier schottky rectifier ultra low VF = 0.38 V at IF = 5 A 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA
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