2N4856E3 datasheet, PDF - EEWORLD Datasheet

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2N4856E3: DescriptionSmall Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size44KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N4856E3 Overview

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN

2N4856E3 Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain-source on-resistance	25 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	8 pF
JEDEC-95 code	TO-206AA
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Guideline	MIL-19500/385
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

N-CHANNEL J-FET

Equivalent To MIL-PRF-19500/385

DEVICES

LEVELS

2N4856

2N4857

2N4858

2N4859

2N4860

2N4861

MQ = JAN Equivalent

MX = JANTX Equivalent

MV = JANTXV Equivalent

2N4856

2N4857

2N4858

-40

0.36

1.8

-65 to + 200

2N4859

2N4860

2N4861

-30

ABSOLUTE MAXIMUM RATINGS (T

= +25°C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

Gate Current

Power Dissipation

= +25°C

(1)

= +25°C

(2)

Operating Junction & Storage Temperature Range

(1) Derate linearly 2.06 mW/°C for T

> +25°C.

(2) Derate linearly 10.3 mW/°C for T

> +25°C.

ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise noted)

Parameters / Test Conditions

Gate-Source Breakdown Voltage

2N4856, 2N4857, 2N4858

= 0, I

= -1.0μA dc

2N4859, 2N4860, 2N4861

Gate-Source “Off” State Voltage

= 15V dc

2N4856, 2N4859

2N4857, 2N4860

= 0.5ηA dc

2N4858, 2N4861

Gate Reverse Current

= 0, V

= -20V dc

= 0, V

= -15V dc

2N4856, 2N4857, 2N4858

2N4859, 2N4860, 2N4861

Symbol

(BR)GSS

Min.

-40

-30

-4.0

-2.0

-0.8

-10

-6.0

-4.0

-0.25

0.25

8.0

175

100

0.75

0.50

Max.

Unit

Vdc

, T

stg

°C

Symbol

Unit

TO-18

(TO-206AA)

GS(off)

Vdc

GSS

D(off)

ηA

Drain Current Cutoff

= -10V dc, V

= 15V dc

Drain Current Zero Gate Voltage

= 0, V

= 15V dc

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

Drain-Source “On” State Voltage

= 0, I

= 20mA dc

2N4856, 2N4859

= 0, I

= 10mA dc

2N4857, 2N4860

= 0, I

= 5.0mA dc

2N4858, 2N4861

Static Drain – Source “On” State Resistance

= 0, I

= 1.0mA dc

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

T4-LDS-0002 Rev. 2 (090603)

DSS

DS(on)

Vdc

ds(on)

Page 1 of 2

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