CXT2907A datasheet, PDF - EEWORLD Datasheet

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CXT2907A: Descriptionsurface mount pnp silicon transistor; CategoryDiscrete semiconductor The transistor; File Size101KB，2 Pages; ManufacturerCentral Semiconductor

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CXT2907A Overview

surface mount pnp silicon transistor

CXT2907A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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CXT2907A

SURFACE MOUNT

PNP SILICON TRANSISTOR

Central

TM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT2907A

type is an PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for small signal

general purpose and switching applications.

SOT-89 CASE

MAXIMUM RATINGS

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ,Tstg

Θ

JA

60

5.0

600

1.2

-65 to +150

104

UNITS

V

mA

W

°C

°C/W

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted)

SYMBOL

ICBO

ICEV

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

TEST CONDITIONS

VCB=50V

VCB=50V, TA=125°C

VCE=30V, VBE=0.5V

IC=10mA

IE=10mA

IC=150mA,

IC=500mA,

IC=150mA,

IC=500mA,

IB=15mA

IB=50mA

IB=15mA

IB=50mA

75

100

300

R3 ( 19-December 2001)

60

5.0

0.4

1.6

1.3

2.6

MIN

MAX

10

50

UNITS

nA

µA

nA

V

VCE=10V, IC=0.1mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=10V, IC=150mA

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