GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED
®
antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
INT-A-PAK
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
at 200 A, 25 °C
600 V
265 A
1.74 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
SYMBOL
V
CES
I
C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 85 °C
T
C
= 25 °C
T
C
= 67 °C
TEST CONDITIONS
MAX.
600
265
200
400
400
400
± 20
2500
625
325
V
W
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
SYMBOL
V
BR(CES)
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔT
J
g
fe
I
CES
V
FM
I
GES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 200 A
V
GE
= 15 V, I
C
= 200 A, T
J
= 125 °C
I
C
= 0.25 mA
V
CE
= V
GE
, I
C
= 0.25 mA
V
CE
= 20 V, I
C
= 200 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
I
C
= 200 A, V
GE
= 0 V
I
C
= 200 A, V
GE
= 0 V, T
J
= 125 °C
V
GE
= ± 20 V
MIN.
600
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.74
1.79
4.4
- 11
220
0.014
-
4.2
4.4
-
MAX.
-
2.2
2.25
6
-
-
1
10
6.0
6.2
± 250
mV/°C
S
mA
V
nA
V
UNITS
Document Number: 94545
Revision: 04-May-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
b
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
I
C
= 200 A
V
CC
= 360 V
dI/dt = 1300 A/μs
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
I
C
= 200 A
V
CC
= 360 V
V
GE
= ± 15 V
T
J
= 125 °C
R
g1
= 15
Ω
R
g2
= 0
Ω
I
C
= 200 A
V
CC
= 360 V
V
GE
= ± 15 V
T
J
= 25 °C
R
g1
= 15
Ω
R
g2
= 0
Ω
TEST CONDITIONS
I
C
= 200 A
I
C
= 270 A
V
GE
= 15 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
900
125
306
220
154
300
180
2.2
6.6
8.8
342
194
366
213
5
16
21
20 068
1254
261
179
120
10 714
1922
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
A
μC
A/μs
pF
mJ
ns
mJ
ns
nC
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
Case to sink per module
Mounting torque
Weight
case to heatsink
case to terminal 1, 2, 3
IGBT
Diode
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
MIN.
- 40
- 40
-
-
-
-
-
-
TYP.
-
-
-
-
0.1
-
-
200
MAX.
150
125
0.2
0.4
-
4
3
-
Nm
g
°C/W
UNITS
°C
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94545
Revision: 04-May-10
GA200TS60UPbF
"Half-Bridge" IGBT INT-A-PAK
Vishay High Power Products
(Ultrafast Speed IGBT), 200 A
140
For both:
120
Load Current (A)
100
Duty cycle: 50 %
TJ = 125 °C
Tsink = 90 °C
Gate drive as specified
Power Dissipation =
120
W
80
Square wave:
60 % of rated
voltage
60
I
40
Ideal diodes
20
0
0.1
1
10
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
1000
T
C
- Case Temperature (°C)
V
GE
= 15V
500 µs pulse width
I
C
- Collector-to-Emitter Current (A)
160
140
120
100
80
60
40
20
0
100
T
J
= 125 °C
T
J
= 25 °C
10
0.5
1.0
1.5
2.0
2.5
V
CE
- Collector-to-Emitter Voltage (V)
0
50
100
150
200
250
300
Maximum DC Collector Current (A)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Case Temperature vs. Maximum Collector Current
I
C
- Collector-to-Emitter Current (A)
1000
V
GE
= 20 V
500 µs pulse width
V
CE
- Collector-to-Emitter Voltage (V)
3
2.5
400 A
100
T
J
= 125 °C
2
200 A
10
T
J
= 25 °C
1.5
100 A
1
4.0
5.0
6.0
7.0
8.0
9.0
V
GE
- Gate-to-Emitter Voltage (V)
1
20
40
60
80
100
120
140
160
T
J
- Junction Temperature (°C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94545
Revision: 04-May-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
Single pulse
(thermal response)
0.001
1E-005
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
70
20
V
CE
- Gate-to-Emitter Voltage (V)
Total Switching Losses (mJ)
V
CC
= 400 V
I
C
= 135 A
60
50
40
30
20
10
V
CC
= 360 V
T
J
= 125 °C
16
12
V
GE
= 15 V
Rg1 = 15
Ω
Rg2 = 0
Ω
8
4
0
0
200
400
600
800
1000
0
0
50
100 150 200 250 300 350 400
Q
G
- Total gate Charge (nC)
I
C
- Collector-to-Emitter Current (A)
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
40
500
Fig. 9 - Typical Switching Losses vs.
Collector to Emitter Current
Total Switching Losses (mJ)
V cc = 360 V
T
J
= 125 °C
35
V
GE
= 15 V
I
c
= 200 A
30
I
C
- Collector-to-Emitter Current (A)
V
GE
= 20 V
400
Safe operating area
300
200
25
100
20
0
10
20
30
40
50
0
0
100
200
300
400
500
600
700
R
G
- Gate Resistance
(Ω)
V
CE
- Collector-to-Emitter Voltage (V)
Fig. 8 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Reverse Bias SOA
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94545
Revision: 04-May-10
GA200TS60UPbF
"Half-Bridge" IGBT INT-A-PAK
Vishay High Power Products
(Ultrafast Speed IGBT), 200 A
1000
20000
I
F
- Instantaneous Forward Current (A)
15000
400 A, 125 °C
100
T
J
= 25 °C
T
J
= 125 °C
t
RR
(ns)
10000
200 A, 125 °C
100 A, 125 °C
400 A, 25 °C
200 A, 25 °C
5000
100 A, 2 5°C
10
1.0
2.0
3.0
4.0
5.
6.0
0
500
1000
1500
2000
V
FM
- Forward Voltage Drop (V)
dI
F/
dt (A/µs)
Fig. 11 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
20000
Fig. 13 - Typical Reverse Recovery Time vs. dI
F
/dt
250
15000
400 A, 125 °C
200
400 A, 125 °C
200 A, 125 °C
100 A, 125 °C
Q
RR
(nC)
10000
200 A, 125 °C
100 A, 125 °C
400 A, 25 °C
200 A, 25 °C
I
RRM
(A)
150
100
400 A, 25 °C
200 A, 25 °C
100 A, 25 °C
5000
100 A, 25 °C
50
0
500
1000
1500
2000
0
500
1000
1500
2000
dI
F/
dt (A/µs)
dI
F/
dt (A/µs)
Fig. 12 - Typical Stored Charge vs. dI
F
/dt
Fig. 14 - Typical Reverse Recovery vs. dI
F
/dt
Document Number: 94545
Revision: 04-May-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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