DTA143EUA datasheet, PDF - EEWORLD Datasheet

DTA143EUA: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size933KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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DTA143EUA Overview

Small Signal Bipolar Transistor

Parameter Name	Attribute value
Maker	SECOS
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Other features	BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

	DTA143EUA	DTA143ECA	DTA143ESA
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Maker	SECOS	SECOS	SECOS
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	compliant
Other features	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30	30	30
JESD-30 code	R-PDSO-G3	R-PDSO-G3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
surface mount	YES	YES	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	DUAL	DUAL	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz
Base Number Matches	1	1	1
Is Samacsys	-	N	N

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