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DTA143ESA

Description
Small Signal Bipolar Transistor
CategoryThe transistor   
File Size933KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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DTA143ESA Overview

Small Signal Bipolar Transistor

DTA143ESA Parametric

Parameter NameAttribute value
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Is SamacsysN
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1

DTA143ESA Related Products

DTA143ESA DTA143EUA DTA143ECA
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Maker SECOS SECOS SECOS
package instruction CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30 30
JESD-30 code O-PBCY-T3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
surface mount NO YES YES
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal location BOTTOM DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1
Is Samacsys N - N
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