SRAM Module, 512KX8, 85ns, CMOS, PDIP32
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Objectid | 1164792540 |
package instruction | DIP, DIP32,.6 |
Reach Compliance Code | unknown |
ECCN code | 3A991.B.2.A |
YTEOL | 0 |
Maximum access time | 85 ns |
I/O type | COMMON |
JESD-30 code | R-PDIP-T32 |
JESD-609 code | e0 |
memory density | 4194304 bit |
Memory IC Type | SRAM MODULE |
memory width | 8 |
Number of terminals | 32 |
word count | 524288 words |
character code | 512000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 512KX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIP |
Encapsulate equivalent code | DIP32,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Certification status | Not Qualified |
Maximum standby current | 0.00004 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.11 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |