JAN2N3765 datasheet, PDF - EEWORLD Datasheet

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JAN2N3765: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46,; CategoryDiscrete semiconductor The transistor; File Size88KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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JAN2N3765 Overview

Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46,

JAN2N3765 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-46
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
Guideline	MIL-19500/396
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Data Sheet No. 2N3765

Type 2N3765

Geometry 6706

Polarity PNP

Qual Level: JAN - JANTXV

Features:

•

General-purpose transistor for

switching and amplifier applica-

tons.

Housed in a

TO-46

case.

Also available in chip form using

the 6706 chip geometry.

The Min and Max limits shown are

per

MIL-PRF-19500/396

which

Semicoa meets in all cases.

Generic Part Number:

2N3765

REF: MIL-PRF-19500/396

TO-46

Maximum Ratings

T

C

= 25 C unless otherwise specified

o

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Operating Junction Temperature

Storage Temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

T

J

T

STG

Rating

60

5.0

1.5

-55 to +200

Unit

V

mA

o

C

o

JAN2N3765 Related Products

	JAN2N3765	JANTXV2N3765	JANTX2N3765	2N3765
Description	Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46,	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, Metal, 3 Pin	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, Metal, 3 Pin	Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, PNP, Silicon, TO-46
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A	1.5 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	35	35	35	35
JEDEC-95 code	TO-46	TO-46	TO-46	TO-46
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
ECCN code	EAR99	EAR99	EAR99	-
Collector-emitter maximum voltage	60 V	60 V	60 V	-
Guideline	MIL-19500/396	MIL-19500/396	MIL-19500/396	-

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