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ES2DALHM3G

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size511KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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ES2DALHM3G Overview

Rectifier Diode,

ES2DALHM3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid145220034612
Reach Compliance Codeunknown
Country Of OriginMainland China
ECCN codeEAR99
YTEOL1.08
Other featuresFREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
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