VVC1 VVC2
Voltage Controlled Crystal Oscillator
Features
•
VCXO with a CMOS output
•
Small 5.0 X 7.0 X 1.9 mm package
•
Output frequencies to 66 MHz
•
5.0 or 3.3 V operation
•
Low Jitter < 6 pS rms, f
o
>12MHz
•
Tri-State Output for test and board debug
•
0/70 or –40/85
°C
operating temperature
•
Hermetically sealed ceramic SMD package
•
Lead free construction
The VVC1 Voltage Controlled Crystal Oscillator
•
Product is compliant to RoHS directive
and fully compatible with lead free assembly
Applications
•
SONET/SDH/DWDM
ESD Diodes
•
Ethernet, Gigabit Ethernet
•
xDSL/PCMCIA cards
•
Digital Video
•
Broadband Access
Vc
Input
Buffer
Output
Buffer /
Tri-state
f
O
Description
Vectron’s VVC1/VVC2 Voltage Controlled
Crystal Oscillator (VCXO) is a quartz stabilized
square wave generator with a CMOS output and
is tested at CMOS and TTL (5.0 volt operation)
logic levels.
The VVC1/VVC2 uses fundamental crystals
resulting in low jitter performance and a
monolithic IC which improves reliability and
reduces cost.
Vectron International 267 Lowell Road, Hudson NH 03051
Tel: 1-88-VECTRON-1
e-mail: vectron@vectron.com
VVC1, VVC2 Voltage Controlled Crystal Oscillator
Performance Characteristics
Table 1. Electrical Performance
Parameter
Frequency
Supply Voltage
1
(+5.0 V ± 5%)
(+3.3 V ± 5%)
Supply Current
(+5.0 V)
(+3.3 V)
Output Logic Levels
Output Logic High
2
Output Logic Low
2
Transition Times
Rise Time
2
Fall Time
2
Symmetry or Duty Cycle
3
Operating temperature (ordering
option)
Total Pull Range (ordering
option)
Or
Absolute Pull Range
Test Conditions for APR (+5V option)
Test Conditions for APR (+3.3V option)
Gain Transfer (See Figure 3)
Control Voltage Impedance
Control Voltage Bandwidth (-3dB)
Package Size
Symbol
f
O
V
DD
I
DD
Min
1.544
4.750
3.135
Typical
5.0
3.3
Maximum
65.536
5.250
3.465
55
40
Units
MHz
V
mA
V
OH
V
OL
t
R
t
F
SYM
0.9*V
DD
0.1V
DD
5
5
55
V
V
ns
ns
%
°C
ppm
45
50
0/70 or –40/85
±50, ±100 or ±150
±50, ±80 or ±100
V
C
V
C
0.5
0.3
Positive
90
4.5
3.0
BW
10
5.0 x 7.0 x 1.9
V
V
ppm/V
Kohm
kHz
mm
1. A 0.01uF and a 0.1uF capacitor should be located as close to the supply as possible (to ground) is recommended.
2. Figure 1 defines these parameters. Figure 2 illustrates the equivalent five gate TTL load and operating conditions under which
these parameters are tested and specified.
3. Symmetry is defined as (ON TIME/PERIOD with Vs= 1.4 V for TTL and Vs=2.5 V for CMOS, 5 volt operation, and Vs=1.65V
for 3.3 Volt operation.
t
R
80
%
t
F
I
DD
6
V
DD
+
-
2
5
3
650Ω
Vs
20
%
On Time
Period
.
1µF
.01µF
I
C
V
C
1
+
-
4
15pF
1.8k
Figure 1. Output Waveform
Figure 2. Typical Output Test Conditions (25±5°C)
Vectron International 267 Lowell Rd, Hudson NH 03051
Tel: 1-88-VECTRON-1
e-mail: vectron@vectron.com
VVC1, VVC2 Voltage Controlled Crystal Oscillator
Outline Diagram, Pad Layout and Pin Out
Pin #
1
2
3
4
5
6
Symbol
V
C
NC or Tri-state
GND
f
O
Tri-state or NC
V
DD
Function
Control Voltage
No Connect or Tri-state
Ground
Output Frequency
Logic low disables output
Logic high or no connection enables output waveform
Supply Voltage
Vectron International 267 Lowell Rd, Hudson NH 03051
Tel: 1-88-VECTRON-1
e-mail: vectron@vectron.com
VVC1, VVC2 Voltage Controlled Crystal Oscillator
Tape and Reel
J
F
D
A
E
C
G
B
L
I
H
K
Table 2.
Tape and Reel Dimensions (mm)
Tape Dimensions
Product
A
VVC1/2
16
B
7.5
C
1.5
D
4
E
8
Reel Dimensions
F
G
H
2
21
13
I
60
J
2
K
17
L
180
# Per
Reel
1000
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can permanently damage the device. Functional
operation is not implied at these or any other conditions in excess of conditions represented in the
operational sections of this data sheet. Exposure to absolute maximum ratings for extended periods may
adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Parameter
Symbol
Power Supply
V
DD
Storage Temperature
Tstorage
Voltage Control Range
V
C
Ratings
6
-55/125
Gnd to V
DD
Unit
Vdc
°C
V
Vectron International 267 Lowell Rd, Hudson NH 03051
Tel: 1-88-VECTRON-1
e-mail: vectron@vectron.com
VVC1, VVC2 Voltage Controlled Crystal Oscillator
Reliability
The VVC1/VVC2 is capable of meeting the following qualification tests.
Table 4. Environnemental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross and Fine Leak
Resistance to Solvents
Moisture Sensitivity Level
Conditions
MIL-STD-883 Method 2002
MIL-STD-883 Method 2007
MIL-STD-883 Method 2003
MIL-STD-883 Method 1014
MIL-STD-883 Method 2016
1
Handling Precautions
Although ESD protection circuitry has been designed into the the VVC1/VVC2, proper precautions should
be taken when handling and mounting. VI employs a Human Body Model and a Charged-Device Model
(CDM) for ESD susceptibility testing and design protection evaluation. ESD thresholds are dependent on
the circuit parameters used to define the model. Although no industry wide standard has been adopted
for the CDM, a standard HBM of resistance = 1.5kohms and capacitance = 100pF is widely used and
therefore can be used for comparison purposes.
Table 5. ESD Ratings
Model
Human Body Model
Charged Device Model
Minimum
1500
1000
Conditions
MIL-STD-883 Method 3115
JESD 22-C101
Suggested IR profile
Devices are built using lead free epoxy and can also be subjected to standard lead free IR reflow
conditions.
Table 6. Reflow Profile (IPC/JEDEC J-STD-020)
Parameter
Symbol
PreHeat Time
Ramp Up
Time Above 217 C
Time To Peak Temperature
Time At 260 C (max)
Time At 240°C (max)
Ramp Down
o
o
Value
60 sec Min, 200 sec Max
3 C/sec Max
60 sec Min, 150 sec Max
480 sec Max
20 sec Min, 40 sec Max
60 sec MAX
6 C/sec Max
o
o
t
S
R
UP
t
L
t
AMB-P
t
P
tp2
R
DN
Vectron International 267 Lowell Rd, Hudson NH 03051
Tel: 1-88-VECTRON-1
e-mail: vectron@vectron.com
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
