PHT6N06T datasheet, PDF - EEWORLD Datasheet

PHT6N06T: DescriptionTrenchMOS transistor Standard level FET; CategoryDiscrete semiconductor The transistor; File Size54KB，10 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/; Environmental Compliance

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PHT6N06T Overview

TrenchMOS transistor Standard level FET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	2.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
surface mount	YES
Terminal surface	Matte Tin (Sn)

	PHT6N06T	PHT6N06
Description	TrenchMOS transistor Standard level FET	TrenchMOS transistor Standard level FET

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