Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3
| Parameter Name | Attribute value |
| Maker | Vishay |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 230 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 5.9 A |
| Maximum drain-source on-resistance | 0.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 24 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRFI630G-105PBF | IRFI630G-105 | |
|---|---|---|
| Description | Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3 | Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULL PACK-3 |
| Maker | Vishay | Vishay |
| Parts packaging code | TO-220AB | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 230 mJ | 230 mJ |
| Shell connection | ISOLATED | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V |
| Maximum drain current (ID) | 5.9 A | 5.9 A |
| Maximum drain-source on-resistance | 0.4 Ω | 0.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 24 A | 24 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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