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KM416S1021BT-G7

Description
Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50
Categorystorage    storage   
File Size2MB,27 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KM416S1021BT-G7 Overview

Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50

KM416S1021BT-G7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1516465036
package instructionTSOP, TSOP50,.46,32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time5 ns
Maximum clock frequency (fCLK)142 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PDSO-G50
JESD-609 codee0
memory density16777216 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of terminals50
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.18 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL

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