KBU806GT0 datasheet, PDF - EEWORLD Datasheet

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KBU806GT0: DescriptionBridge Rectifier Diode, 8A, 800V V(RRM),; CategoryDiscrete semiconductor diode; File Size187KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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KBU806GT0 Overview

Bridge Rectifier Diode, 8A, 800V V(RRM),

KBU806GT0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	R-PSFM-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	800 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PSFM-W4
JESD-609 code	e3
Maximum non-repetitive peak forward current	200 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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KBU801G thru KBU807G

Taiwan Semiconductor

CREAT BY ART

Glass Passivated Bridge Rectifiers

FEATURES

- Glass passivated junction

- Ideal for printed circuit board

- High case dielectric strength

- Typical IR less than 0.1μA

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

KBU

MECHANICAL DATA

Case:

KBU

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Mounting torque:

0.56 Nm max.

Weight:

7.2 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25 C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Rating for fusing (t<8.3mS)

Maximum instantaneous forward voltage (Note 1)

= 4 A

= 8 A

Maximum DC reverse current

at rated DC blocking voltage

Typical junction capacitance per leg

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

Note 2: Measured at 1MHz and applied Reverse Voltage of 4.0V D.C.

=25

=125

SYMBOL

RRM

RMS

F(AV)

FSM

KBU

801G

KBU

802G

100

KBU

803G

200

140

200

KBU

804G

400

280

400

200

166

1.0

1.1

500

400

- 55 to +150

KBU

805G

600

420

600

KBU

806G

800

560

800

KBU

807G

1000

700

1000

Unit

θJC

θJA

STG

μA

C/W

Document Number: DS_D1409012

Version: H14

KBU806GT0 Related Products

	KBU806GT0	KBU802GT0G	KBU804GT0	KBU801GT0G	KBU801GT0	KBU805GT0	KBU805GT0G	KBU803GT0
Description	Bridge Rectifier Diode, 8A, 800V V(RRM),	Bridge Rectifier Diode,	Bridge Rectifier Diode, 8A, 400V V(RRM),	Bridge Rectifier Diode,	Bridge Rectifier Diode, 8A, 50V V(RRM),	Bridge Rectifier Diode, 8A, 600V V(RRM),	Bridge Rectifier Diode,	Bridge Rectifier Diode, 8A, 200V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	-	-	Taiwan Semiconductor
package instruction	R-PSFM-W4	-	R-PSFM-W4	-	R-PSFM-W4	R-PSFM-W4	-	R-PSFM-W4
Other features	UL RECOGNIZED	-	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	-	UL RECOGNIZED
Minimum breakdown voltage	800 V	-	400 V	-	50 V	600 V	-	200 V
Shell connection	ISOLATED	-	ISOLATED	-	ISOLATED	ISOLATED	-	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	-	SILICON	-	SILICON	SILICON	-	SILICON
Maximum forward voltage (VF)	1 V	-	1 V	-	1 V	1 V	-	1 V
JESD-30 code	R-PSFM-W4	-	R-PSFM-W4	-	R-PSFM-W4	R-PSFM-W4	-	R-PSFM-W4
Maximum non-repetitive peak forward current	200 A	-	200 A	-	200 A	200 A	-	200 A
Number of components	4	-	4	-	4	4	-	4
Phase	1	-	1	-	1	1	-	1
Number of terminals	4	-	4	-	4	4	-	4
Maximum operating temperature	150 °C	-	150 °C	-	150 °C	150 °C	-	150 °C
Minimum operating temperature	-55 °C	-	-55 °C	-	-55 °C	-55 °C	-	-55 °C
Maximum output current	8 A	-	8 A	-	8 A	8 A	-	8 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Maximum repetitive peak reverse voltage	800 V	-	400 V	-	50 V	600 V	-	200 V
surface mount	NO	-	NO	-	NO	NO	-	NO
Terminal form	WIRE	-	WIRE	-	WIRE	WIRE	-	WIRE
Terminal location	SINGLE	-	SINGLE	-	SINGLE	SINGLE	-	SINGLE
Base Number Matches	1	1	1	1	1	1	1	-

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