KBU805GT0G datasheet, PDF - EEWORLD Datasheet

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KBU805GT0G: DescriptionBridge Rectifier Diode,; CategoryDiscrete semiconductor diode; File Size187KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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KBU805GT0G Overview

Bridge Rectifier Diode,

KBU805GT0G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
ECCN code	EAR99
Diode type	BRIDGE RECTIFIER DIODE
JESD-609 code	e3
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Terminal surface	MATTE TIN
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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KBU801G thru KBU807G

Taiwan Semiconductor

CREAT BY ART

Glass Passivated Bridge Rectifiers

FEATURES

- Glass passivated junction

- Ideal for printed circuit board

- High case dielectric strength

- Typical IR less than 0.1μA

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

KBU

MECHANICAL DATA

Case:

KBU

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Mounting torque:

0.56 Nm max.

Weight:

7.2 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25 C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Rating for fusing (t<8.3mS)

Maximum instantaneous forward voltage (Note 1)

= 4 A

= 8 A

Maximum DC reverse current

at rated DC blocking voltage

Typical junction capacitance per leg

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

Note 2: Measured at 1MHz and applied Reverse Voltage of 4.0V D.C.

=25

=125

SYMBOL

RRM

RMS

F(AV)

FSM

KBU

801G

KBU

802G

100

KBU

803G

200

140

200

KBU

804G

400

280

400

200

166

1.0

1.1

500

400

- 55 to +150

KBU

805G

600

420

600

KBU

806G

800

560

800

KBU

807G

1000

700

1000

Unit

θJC

θJA

STG

μA

C/W

Document Number: DS_D1409012

Version: H14

KBU805GT0G Related Products

	KBU805GT0G	KBU806GT0	KBU802GT0G	KBU804GT0	KBU801GT0G	KBU801GT0	KBU805GT0	KBU803GT0
Description	Bridge Rectifier Diode,	Bridge Rectifier Diode, 8A, 800V V(RRM),	Bridge Rectifier Diode,	Bridge Rectifier Diode, 8A, 400V V(RRM),	Bridge Rectifier Diode,	Bridge Rectifier Diode, 8A, 50V V(RRM),	Bridge Rectifier Diode, 8A, 600V V(RRM),	Bridge Rectifier Diode, 8A, 200V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	MATTE TIN	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	1	-
Maker	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	-	Taiwan Semiconductor
package instruction	-	R-PSFM-W4	-	R-PSFM-W4	-	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
Other features	-	UL RECOGNIZED	-	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	-	800 V	-	400 V	-	50 V	600 V	200 V
Shell connection	-	ISOLATED	-	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Configuration	-	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	-	SILICON	-	SILICON	-	SILICON	SILICON	SILICON
Maximum forward voltage (VF)	-	1 V	-	1 V	-	1 V	1 V	1 V
JESD-30 code	-	R-PSFM-W4	-	R-PSFM-W4	-	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
Maximum non-repetitive peak forward current	-	200 A	-	200 A	-	200 A	200 A	200 A
Number of components	-	4	-	4	-	4	4	4
Phase	-	1	-	1	-	1	1	1
Number of terminals	-	4	-	4	-	4	4	4
Maximum operating temperature	-	150 °C	-	150 °C	-	150 °C	150 °C	150 °C
Minimum operating temperature	-	-55 °C	-	-55 °C	-	-55 °C	-55 °C	-55 °C
Maximum output current	-	8 A	-	8 A	-	8 A	8 A	8 A
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	-	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	-	800 V	-	400 V	-	50 V	600 V	200 V
surface mount	-	NO	-	NO	-	NO	NO	NO
Terminal form	-	WIRE	-	WIRE	-	WIRE	WIRE	WIRE
Terminal location	-	SINGLE	-	SINGLE	-	SINGLE	SINGLE	SINGLE

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