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M5M4V18160DTP-6S

Description
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44
Categorystorage    storage   
File Size2MB,30 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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M5M4V18160DTP-6S Overview

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44

M5M4V18160DTP-6S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1164774057
package instructionTSOP, TSOP44/50,.46,32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
memory density16777216 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Number of terminals44
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP44/50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
self refreshYES
Maximum standby current0.00015 A
Maximum slew rate0.15 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
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