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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N5087TAR
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2N5087TAR

Description
transistor pnp 50v 100ma TO-92
CategoryDiscrete semiconductor    The transistor   
File Size100KB，9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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2N5087TAR Overview

transistor pnp 50v 100ma TO-92

2N5087TAR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionLEAD FREE PACKAGE-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1

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Download Datasheet
2N5086/2N5087/MMBT5087
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
TO-92
1
1. Emitter 2. Base 3. Collector
3
2
SOT-23
1 Mark: 2Q
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= -1.0mA, I
B
= 0
I
C
= -100µA, I
E
= 0
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
V
EB
= -3.0V, I
C
= 0
I
C
= -100µA, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
V
CE(sat)
V
BE(on)
f
T
C
cb
h
fe
NF
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= -10mA, I
B
= -1.0mA
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -500µA, V
CE
= -5.0V, f = 20MHz
V
CB
= -5.0V, I
E
= 0, f = 100KHz
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
I
C
= -100µA, V
CE
= -5.0V
R
S
= 3.0kΩ, f = 1.0KHz
I
C
= -20µA, V
CE
= -5.0V
R
S
= 10kΩ
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Min.
-50
-50
Max.
Units
V
V
Off Characteristics
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
V
(BR)CBO
I
CEO
I
CBO
h
FE
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
-10
-50
-50
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
nA
nA
nA
On Characteristics
-0.3
-0.85
40
4.0
5086
5087
5086
5087
5086
5087
150
250
600
900
3.0
2.0
3.0
2.0
V
V
MHz
pF
Small Signal Characteristics
dB
dB
dB
dB
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003

2N5087TAR Related Products

2N5087TAR 2N5087_S00Z 2N5086TAR 2N5086BU 2N5086TF 2N5087TA 2N5087BU 6285-2N5087
Description transistor pnp 50v 100ma TO-92 transistor pnp 50v 100ma TO-92 transistor pnp 50v 100ma TO-92 transistor pnp 50v 100ma TO-92 transistor pnp 50v 100ma TO-92 transistor pnp 50v 100ma TO-92 IC trans pnp SS LN 100ma TO-92 Transistor
package instruction LEAD FREE PACKAGE-3 , CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 ,
Reach Compliance Code unknow unknow unknow unknow unknow unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.05 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration SINGLE Single SINGLE SINGLE SINGLE SINGLE SINGLE Single
Minimum DC current gain (hFE) 250 250 150 150 150 250 250 250
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
surface mount NO NO NO NO NO NO NO NO
Nominal transition frequency (fT) 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to -
Parts packaging code TO-92 - TO-92 TO-92 TO-92 TO-92 TO-92 -
Contacts 3 - 3 3 3 3 3 -
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 -
Other features LOW NOISE - LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE -
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V 50 V 50 V -
JEDEC-95 code TO-92 - TO-92 TO-92 TO-92 TO-92 TO-92 -
JESD-30 code O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e3 - e3 e3 e3 e3 e3 -
Number of components 1 - 1 1 1 1 1 -
Number of terminals 3 - 3 3 3 3 3 -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND -
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT APPLICABLE - NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT APPLICABLE - NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE -
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON -
Base Number Matches 1 1 1 1 1 1 1 -

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