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MT45W1MW16BDGB-708 WT TR

Description
IC psram 16mbit 70ns 54vfbga
Categorystorage   
File Size2MB,59 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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MT45W1MW16BDGB-708 WT TR Overview

IC psram 16mbit 70ns 54vfbga

MT45W1MW16BDGB-708 WT TR Parametric

Parameter NameAttribute value
Datasheets
MT45W1MW16BDGB
Product Photos
54 VFBGA Package
Standard Package1,000
CategoryIntegrated Circuits (ICs)
FamilyMemory
PackagingTape & Reel (TR)
Format - MemoryRAM
Memory TypePSRAM (Page)
Memory Size16M (1M x 16)
Speed70ns
InterfaceParallel
Voltage - Supply1.7 V ~ 1.95 V
Operating Temperature-30°C ~ 85°C
Package / Case54-VFBGA
Supplier Device Package54-VFBGA (6x8)
Other Names557-1274-2MT45W1MW16BDGB-708 WT TR-ND
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst CellularRAM™ Memory
MT45W1MW16BDGB
Features
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• V
CC
, V
CC
Q voltages:
1.7–1.95V V
CC
1.7–3.6V
1
V
CC
Q
• Page mode read access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Burst mode write access: continuous burst
• Burst mode read access:
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz (
t
CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 7ns @ 104 MHz
• Low power consumption
Asynchronous read: <20mA
Intrapage read: <15mA
Intrapage read initial access, burst read:
(39ns [4 clocks] @ 104 MHz) < 35mA
Continuous burst read: <28mA
Standby: 70µA
Deep power-down: <10µA (TYP @ 25°C)
• Low-power features
Temperature-compensated refresh (TCR)
On-chip temperature sensor
Partial-array refresh (PAR)
Deep power-down (DPD) mode
Figure 1:
54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
NC
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
NC
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
Options (continued)
• Standby power
Standard
• Operating temperature range
Wireless (–30°C to +85°C)
Industrial (–40°C to +85°C)
Designator
None
WT
1
IT
2
Options
• Configuration
1 Meg x 16
• Package
54-ball VFBGA (“green”)
• Access time
70ns access
• Frequency
80 MHz
104 MHz
Designator
MT45W1MW16BD
GB
-70
8
1
Notes: 1. 3.6V I/O and –30°C exceed the CellularRAM
Workgroup 1.0 specifications.
2. Contact factory.
Part Number Example:
MT45W1MW16BDGB-701WT
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_1.fm - Rev. H 4/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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MT45W1MW16BDGB-708 WT TR MT45W1MW16BDGB-701 IT TR MT45W1MW16BDGB-701 IT MT45W1MW16BDGB-708 AT MT45W1MW16BDGB-701 WT TR MT45W1MW16BDGB-708 AT TR
Description IC psram 16mbit 70ns 54vfbga IC psram 16mbit 70ns 54vfbga IC psram 16mbit 70ns 54vfbga IC psram 16mbit 70ns 54vfbga IC psram 16mbit 70ns 54vfbga IC psram 16mbit 70ns 54vfbga
Standard Package 1,000 1 1,000 1,000 1,000 -
Category Integrated Circuits (ICs) Integrated Circuits (ICs) Integrated Circuits (ICs) Integrated Circuits (ICs) Integrated Circuits (ICs) -
Family Memory Memory Memory Memory Memory -
Packaging Tape & Reel (TR) Cut Tape (CT) Tray Tray Tape & Reel (TR) -
Format - Memory RAM RAM RAM RAM RAM -
Memory Type PSRAM (Page) PSRAM (Page) PSRAM (Page) PSRAM (Page) PSRAM (Page) -
Memory Size 16M (1M x 16) 16M (1M x 16) 16M (1M x 16) 16M (1M x 16) 16M (1M x 16) -
Speed 70ns 70ns 70ns 70ns 70ns -
Interface Parallel Parallel Parallel Parallel Parallel -
Voltage - Supply 1.7 V ~ 1.95 V 1.7 V ~ 1.95 V 1.7 V ~ 1.95 V 1.7 V ~ 1.95 V 1.7 V ~ 1.95 V -
Operating Temperature -30°C ~ 85°C -40°C ~ 85°C -40°C ~ 85°C -40°C ~ 105°C -30°C ~ 85°C -
Package / Case 54-VFBGA 54-VFBGA 54-VFBGA 54-VFBGA 54-VFBGA -
Supplier Device Package 54-VFBGA (6x8) 54-VFBGA (6x8) 54-VFBGA (6x8) 54-VFBGA (6x8) 54-VFBGA (6x8) -
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