ASIMS2441 datasheet, PDF - EEWORLD Datasheet

ASIMS2441: DescriptionL BAND, Si, NPN, RF POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size49KB，3 Pages; ManufacturerASI [ASI Semiconductor, Inc]

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ASIMS2441 Overview

L BAND, Si, NPN, RF POWER TRANSISTOR

Parameter Name	Attribute value
Number of terminals	2
Transistor polarity	NPN
Maximum collector current	22 A
Processing package description	0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
surface mount	Yes
Terminal form	FLAT
terminal coating	TIN LEAD
Terminal location	DUAL
Packaging Materials	CERAMIC, METAL-SEALED COFIRED
structure	SINGLE
Shell connection	BASE
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Transistor type	RF POWER
highest frequency band	L BAND

	ASIMS2441	MS2441
Description	L BAND, Si, NPN, RF POWER TRANSISTOR	L BAND, Si, NPN, RF POWER TRANSISTOR
Number of terminals	2	2
Transistor polarity	NPN	NPN
Maximum collector current	22 A	22 A
Processing package description	0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN	0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT
surface mount	Yes	Yes
Terminal form	FLAT	FLAT
terminal coating	TIN LEAD	TIN LEAD
Terminal location	DUAL	DUAL
Packaging Materials	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
structure	SINGLE	SINGLE
Shell connection	BASE	BASE
Number of components	1	1
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Transistor type	RF POWER	RF POWER
highest frequency band	L BAND	L BAND

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