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MS2441

Description
L BAND, Si, NPN, RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size49KB,3 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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MS2441 Overview

L BAND, Si, NPN, RF POWER TRANSISTOR

MS2441 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current22 A
Processing package description0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
surface mountYes
Terminal formFLAT
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
structureSINGLE
Shell connectionBASE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeRF POWER
highest frequency bandL BAND

MS2441 Related Products

MS2441 ASIMS2441
Description L BAND, Si, NPN, RF POWER TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR
Number of terminals 2 2
Transistor polarity NPN NPN
Maximum collector current 22 A 22 A
Processing package description 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating TIN LEAD TIN LEAD
Terminal location DUAL DUAL
Packaging Materials CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
structure SINGLE SINGLE
Shell connection BASE BASE
Number of components 1 1
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Transistor type RF POWER RF POWER
highest frequency band L BAND L BAND
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