|
MS2441 |
ASIMS2441 |
Description |
L BAND, Si, NPN, RF POWER TRANSISTOR |
L BAND, Si, NPN, RF POWER TRANSISTOR |
Number of terminals |
2 |
2 |
Transistor polarity |
NPN |
NPN |
Maximum collector current |
22 A |
22 A |
Processing package description |
0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN |
0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN |
state |
ACTIVE |
ACTIVE |
packaging shape |
RECTANGULAR |
RECTANGULAR |
Package Size |
FLANGE MOUNT |
FLANGE MOUNT |
surface mount |
Yes |
Yes |
Terminal form |
FLAT |
FLAT |
terminal coating |
TIN LEAD |
TIN LEAD |
Terminal location |
DUAL |
DUAL |
Packaging Materials |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
structure |
SINGLE |
SINGLE |
Shell connection |
BASE |
BASE |
Number of components |
1 |
1 |
transistor applications |
AMPLIFIER |
AMPLIFIER |
Transistor component materials |
SILICON |
SILICON |
Transistor type |
RF POWER |
RF POWER |
highest frequency band |
L BAND |
L BAND |