trans prebias npn 200mw umt3
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | ROHM Semiconductor |
| Parts packaging code | SC-70 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | BUILT-IN BIAS RESISTOR |
| Maximum collector current (IC) | 0.6 A |
| Collector-emitter maximum voltage | 15 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| DTC323TUT106 | DTC343TKT146 | DTC323TKT146 | |
|---|---|---|---|
| Description | trans prebias npn 200mw umt3 | Rated power: 200mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 15V Transistor type: NPN - Pre-biased NPN | Rated power: 200mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 15V Transistor type: NPN - pre-biased NPN, Vceo=15V, Ic=600mA |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compli | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Other features | BUILT-IN BIAS RESISTOR | DIGITAL | BUILT-IN BIAS RESISTOR |
| Maximum collector current (IC) | 0.6 A | 0.6 A | 0.6 A |
| Collector-emitter maximum voltage | 15 V | 15 V | 15 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 100 | 100 | 100 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e1 | e1 | e1 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.2 W | 0.2 W | 0.2 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal surface | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 10 | 10 | 10 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 200 MHz | 200 MHz | 200 MHz |
| Parts packaging code | SC-70 | - | SC-59 |
| Contacts | 3 | - | 3 |
| VCEsat-Max | - | 0.08 V | 0.08 V |
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