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2Z27A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size106KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2Z27A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

2Z27A Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage28.3 V
Minimum breakdown voltage25.7 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum dynamic impedance30 Ω
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation900 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusNot Qualified
Nominal reference voltage27 V
Maximum reverse current5 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Working test current10 mA
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