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MAAPGM0051-DIE

Description
Wide Band Medium Power Amplifier, 8500MHz Min, 12500MHz Max, 1 Func, GAAS, 0.098 X 0.117 INCH, 0.003 INCH HEIGHT, DIE
CategoryWireless rf/communication    Radio frequency and microwave   
File Size285KB,5 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

MAAPGM0051-DIE Overview

Wide Band Medium Power Amplifier, 8500MHz Min, 12500MHz Max, 1 Func, GAAS, 0.098 X 0.117 INCH, 0.003 INCH HEIGHT, DIE

MAAPGM0051-DIE Parametric

Parameter NameAttribute value
MakerMACOM
package instructionDIE OR CHIP
Reach Compliance Codecompliant
Is SamacsysN
Base Number Matches1
Amplifier, Power, 1.2W
8.5-12.5 GHz
Features
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG™ Process
MAAPGM0051-DIE
903242 —
Preliminary Information
Description
The
MAAPGM0051-DIE
is a 2-stage 1.2 W power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage
or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal for-
mulation prevents hydrogen poisoning when employed in hermetic
packaging.
Primary Applications
Point-to-Point Radio
Weather Radar
Airborne Radar
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 10V, V
GG
= -2V, P
in
= 18 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
VSWR
Gate Current
Drain Current
Output Third Order Intercept
3
rd
Order Intermodulation Distortion
Single Carrier Level = 21 dBm
5
th
Order Intermodulation Distortion
Single Carrier Level = 21 dBm
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
1
1. T
B
= MMIC Base Temperature
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
I
GG
I
DD
OTOI
IM3
IM5
NF
2f
3f
Typical
8.5-12.5
31
35
30
15
2:1
<4
<400
37
32
56
9
-17
-28
Units
GHz
dBm
%
dBm
dB
mA
mA
dBm
dBc
dBc
dB
dBc
dBc
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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