AO4423/AO4423L
30V P-Channel MOSFET
General Description
The AO4423/AO4423L uses advanced trench technology
to provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.
Product Summary
V
DS
(V) = -30V
I
D
= -17A
R
DS(ON)
< 6.2mΩ
R
DS(ON)
< 7.2mΩ
ESD Protected
100% UIS tested
100% Rg tested (note *)
(V
GS
= -20V)
(V
GS
= -20V)
(V
GS
= -10V)
* RoHS and Halogen-Free Compliant
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±25
-17
-14
-182
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
26
50
14
Max
40
75
24
Units
°C/W
°C/W
°C/W
Rev.12.0 August 2017
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Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-15A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-10V, I
D
=-15A
V
GS
=-6V, I
D
=-10A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-15A
I
S
=-1A,V
GS
=0V
-1.5
-182
5.1
7.4
5.9
7.5
48
-0.71
-1
-4.2
2527
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
2.1
583
397
4.3
47
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
8
14
12
V
GS
=-10V, V
DS
=-15V, R
L
=1.0Ω,
R
GEN
=3Ω
I
F
=-15A, dI/dt=100A/µs
8
54
87
26.1
12.3
32
556
6.4
57
3033
6.2
9
7.2
9.5
-2.1
Min
-30
-1
-5
±1
±10
-2.6
Typ
Max
Units
V
µA
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-15A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.12.0 August 2017
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
-4.5V
-10V
-6V
125°C
30
-I
D
(A)
-I
D
(A)
30
25°C
20
-4V
40
V
DS
=-5V
40
20
-3.5V
10
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
10
Normalized On-Resistance
10
0
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=-6V
I
D
= -10A
V
GS
=-20V
I
D
= -15A
V
GS
=-10V
I
D
= -15A
R
DS(ON)
(mΩ)
8
V
GS
=-6V
V
GS
=-10V
6
V
GS
=-20V
4
16
I
D
=-15A
14
12
10
125°C
8
-I
S
(A)
-15
1.0E+01
-12.8
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
R
DS(ON)
(mΩ)
6
25°C
4
4
8
12
16
20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
1.0E-06
0.0
0.2
0.4
25°C
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Rev.12.0 August 2017
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-15A
Capacitance (pF)
4000
3500
3000
2500
2000
1500
1000
2
500
0
0
10
20
30
40
50
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
C
rss
10
20
30
C
oss
8
-V
GS
(Volts)
Ciss
6
4
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
1000.0
10000
R
DS(ON)
limited
10µs
1000
100µs
Power (W)
T
J(Max)
=150°C
T
A
=25°C
100.0
-I
D
(Amps)
10.0
1ms
1.0
1s
0.1
10s
T
J(Max)
=150°C
T
A
=25°C
0.1
1
DC
10ms
0.1s
100
10
0.0
10
100
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
-15
-12.8
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z
θJA
Normalized Transient
Thermal Resistance
1
0.1
P
D
T
on
Single Pulse
0.01
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.12.0 August 2017
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G ate C harge Test C ircuit & W aveform
V gs
Qg
-10V
VDC
VDC
DUT
V gs
Ig
RL
Vds
Vgs
Vgs
Rg
DUT
VDC
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
Rg
DUT
Vgs
Vgs
Vgs
VDC
Diode Recovery Test Circuit & W aveforms
Vds +
DUT
Vgs
t
rr
Vds -
Isd
Vgs
L
VDC
+
Vdd
-
-Vds
Ig
Rev.12.0 August 2017
+
-
+
-
+
C harge
-
+
-
V ds
Q gs
Q gd
Resistive Switching Test Circuit & Waveforms
t
on
t
d(on)
t
r
t
d(off)
t
off
t
f
Vdd
90%
10%
E
AR
= 1/2 LI
AR
2
Vds
BV
DSS
Vdd
Id
I
AR
Q
rr
= - Idt
-Isd
-I
F
dI/dt
-I
RM
Vdd
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